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(Created page with "{{lithography processes}} The '''250 nm lithography process''' is a full node semiconductor manufacturing process following the 350 nm lithography proces...")
 
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{{lithography processes}}
 
{{lithography processes}}
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The '''250 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[350 nm lithography process|350 nm process]] node. Commercial [[integrated circuit]] manufacturing using 250 nm process began in late 1996 and was eventually replaced by [[180 nm]] by 1998.
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The '''250 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[350 nm lithography process|350 nm process]] node. Commercial [[integrated circuit]] manufacturing using 250 nm process began in late 1996 and was eventually replaced by [[180 nm]] entirely by 1999.
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== Industry ==
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The 0.25 µm-based process entered production at [[Intel]] in 1997. Intel original 0.25 micron process was named ''P856'' or ''Process 856''. A second process, named ''P856.5'', was a 5% linear shrink of the original design rules. The shrink, which enabled a high equipment re-use resulted in a smaller, 9.26 µm<sup>2</sup>, 6T SRAM. The process used 200 mm [[wafer]]s, [[Wikipedia:SiO2|SiO<sub>2</sub>]] dielectric and [[wikipedia:polysilicon|polysilicon]] electode. It used [[wikipedia:Aluminium|Al]] inter-connects and an [[wikipedia:Silicon|Si]] channels.
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{{scrolling table/top|style=text-align: right; | first=Fab
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|Type
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|Contacted Gate Pitch
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|Interconnect Pitch (M1P)
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|SRAM bit cell
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}}
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{{scrolling table/mid}}
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|-
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! colspan="2" | [[Intel]]
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|-
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! Value !! [[350 nm]] Δ
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|-
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| ? nm || ?x
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|-
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| 608 nm || 0.64x
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|-
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| 10.26 µm<sup>2</sup> || 0.57x
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{{scrolling table/end}}
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=== Design Rules ===
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{| class="wikitable collapsible collapsed"
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|-
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! colspan="4" | Intel 0.25 micron Design Rules (P856)
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|-
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! Layer !! Pitch !! Thick !! Aspect Ratio
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|-
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| Isolation || ? nm || ? nm || -
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|-
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| Polysilicon || ? nm || ? nm || -
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|-
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| Metal 1 || 640 nm || 480 nm || 1.6
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|-
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| Metal 2 || 930 nm || 900 nm || 2.0
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|-
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| Metal 3 || 930 nm || 900 nm || 2.0
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|-
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| Metal 4 || 1.60 µm || 1.325 µm || 1.7
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|-
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| Metal 5 || 2.56 µm || 1.900 nm || 1.6
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|}
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{| class="wikitable collapsible collapsed"
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|-
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! colspan="4" | Intel 0.25 %5 shrink micron Design Rules (P856.5)
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|-
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! Layer !! Pitch !! Thick !! Aspect Ratio
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|-
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| Isolation || ? nm || ? nm || -
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|-
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| Polysilicon || ? nm || ? nm || -
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|-
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| Metal 1 || 608 nm || 480 nm || 1.6
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|-
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| Metal 2 || 882 nm || 900 nm || 2.0
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|-
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| Metal 3 || 882 nm || 900 nm || 2.0
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|-
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| Metal 4 || 1.520 µm || 1.325 µm || 1.7
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|-
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| Metal 5 || 2.432 µm || 1.900 nm || 1.6
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|}
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== 250 nm Microprocessors==
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* Intel
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** {{intel|Pentium MMX}}, 200-300 MHz September, 1997
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** {{intel|Pentium II}}, 333-450 MHz, January 1998
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** {{intel|Pentium II}} Notebook, 233-300 MHz, April 1998
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** {{intel|Celeron}}, 200-300 MHz, April 1998
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** {{intel|Celeron}}, 300-533 MHz, August 1998
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** {{intel|Celeron}} Notebook, 266-466 MHz, January 1999
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** {{intel|Pentium III}}, 450-600 MHz, February 1999
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{{expand list}}
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== 250 nm Microarchitectures ==
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{{expand list}}

Revision as of 09:43, 24 April 2016

basic wafer drawing.svg Semiconductor lithography processes technology
v · d · e

The 250 nm lithography process is a full node semiconductor manufacturing process following the 350 nm process node. Commercial integrated circuit manufacturing using 250 nm process began in late 1996 and was eventually replaced by 180 nm entirely by 1999.

Industry

The 0.25 µm-based process entered production at Intel in 1997. Intel original 0.25 micron process was named P856 or Process 856. A second process, named P856.5, was a 5% linear shrink of the original design rules. The shrink, which enabled a high equipment re-use resulted in a smaller, 9.26 µm2, 6T SRAM. The process used 200 mm wafers, SiO2 dielectric and polysilicon electode. It used Al inter-connects and an Si channels.

Fab
Type​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel
Value 350 nm Δ
 ? nm  ?x
608 nm 0.64x
10.26 µm2 0.57x

Design Rules

250 nm Microprocessors

This list is incomplete; you can help by expanding it.

250 nm Microarchitectures

This list is incomplete; you can help by expanding it.

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