Semiconductor & Computer Engineering
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Difference between revisions of "22 nm lithography process"
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The '''22 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[28 nm lithography process|28 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 22 nm process began in 2008 for memory and 2012 for [[MPU]]s. This technology was replaced by with [[20 nm lithography process|20 nm process]] (HN) in 2014 and [[16 nm lithography process|16 nm process]] (FN) in late 2015. | The '''22 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[28 nm lithography process|28 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 22 nm process began in 2008 for memory and 2012 for [[MPU]]s. This technology was replaced by with [[20 nm lithography process|20 nm process]] (HN) in 2014 and [[16 nm lithography process|16 nm process]] (FN) in late 2015. | ||
| + | |||
| + | == Industry == | ||
| + | |||
| + | === Intel === | ||
| + | 22 nm was Intel's first generation of Tri-gate [[FinFET]] transistors. | ||
| + | {| class="wikitable" | ||
| + | |- | ||
| + | | || Measurement || Scaling from [[32 nm]] | ||
| + | |- | ||
| + | | Fin Pitch || 60 nm || | ||
| + | |- | ||
| + | | Contacted Gate Pitch || 90 nm || 0.80x | ||
| + | |- | ||
| + | | Interconnect Pitch (M1P) || 80 nm || 0.71x | ||
| + | |- | ||
| + | | [[SRAM]] bit cell || 0.1080 µm<sup>2</sup> || | ||
| + | |} | ||
== 22 nm Microprocessors== | == 22 nm Microprocessors== | ||
Revision as of 18:42, 23 April 2016
Semiconductor lithography processes technology
The 22 nm lithography process is a full node semiconductor manufacturing process following the 28 nm process stopgap. Commercial integrated circuit manufacturing using 22 nm process began in 2008 for memory and 2012 for MPUs. This technology was replaced by with 20 nm process (HN) in 2014 and 16 nm process (FN) in late 2015.
Contents
Industry
Intel
22 nm was Intel's first generation of Tri-gate FinFET transistors.
| Measurement | Scaling from 32 nm | |
| Fin Pitch | 60 nm | |
| Contacted Gate Pitch | 90 nm | 0.80x |
| Interconnect Pitch (M1P) | 80 nm | 0.71x |
| SRAM bit cell | 0.1080 µm2 |
22 nm Microprocessors
- Intel
This list is incomplete; you can help by expanding it.
22 nm System on Chips
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22 nm Microarchitectures
- Intel:
This list is incomplete; you can help by expanding it.
