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180 nm lithography process
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The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.

Industry

The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.

Industry

Fujitsu's 0.18 micron process (CS-80) is 6-layer FSG based.

Fab
Process Name​
1st Production​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel Fujitsu TSMC
P858 CS-80
1999 2000 2000
Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ
480 nm 0.96x  ? nm  ?x  ? nm  ?x
500 nm 0.82x  ? nm  ?x  ? nm  ?x
5.59 µm2 0.54x 4.18 µm2  ?x 4.65 0.62x

180 nm Microprocessors

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180 nm Microarchitectures

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