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Difference between revisions of "180 nm lithography process"

(Industry)
(Industry)
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== Industry ==
 
== Industry ==
 
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
 
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
=== Intel ===
+
== Industry ==
* 200mm (8-inch) wafers
+
{{scrolling table/top|style=text-align: right; | first=Fab
{| class="wikitable"
+
|Type
 +
|Contacted Gate Pitch
 +
|Interconnect Pitch (M1P)
 +
|SRAM bit cell
 +
}}
 +
{{scrolling table/mid}}
 
|-
 
|-
| || Measurement || Scaling from [[250 nm]]
+
! colspan="2" | [[Intel]] !! colspan="2" | [[Fujitsu]]
 
|-
 
|-
| Contacted Gate Pitch || 480 nm ||
+
! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ
 
|-
 
|-
| Interconnect Pitch (M1P) || 500 nm ||  
+
| 480 nm || ?x || ? nm || ?x
 
|-
 
|-
| [[SRAM]] bit cell || 5.59 µm<sup>2</sup> || .56x
+
| 500 nm || ?x || ? nm || ?x
|}
+
|-
 +
| 5.59 µm<sup>2</sup> || .56x || 4.18 µm<sup>2</sup> || ?x
 +
{{scrolling table/end}}
  
 
== 180 nm Microprocessors==
 
== 180 nm Microprocessors==

Revision as of 04:15, 24 April 2016

The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.

Industry

The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.

Industry

Fab
Type​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel Fujitsu
Value 250 nm Δ Value 250 nm Δ
480 nm  ?x  ? nm  ?x
500 nm  ?x  ? nm  ?x
5.59 µm2 .56x 4.18 µm2  ?x

180 nm Microprocessors

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180 nm System on Chips

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180 nm Microarchitectures

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