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Difference between revisions of "16 nm lithography process"

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{{lithography processes}}
 
{{lithography processes}}
The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to replaced by [[14 nm lithography process|14 nm process]] (HN) (2014) and [[10 nm lithography process|10 nm process]] (FN) in 2017.
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The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in 2017.
  
 
== Industry ==
 
== Industry ==

Revision as of 01:36, 29 April 2016

The 16 nm lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with 10 nm process in 2017.

Industry

Fab
Wafer​
 ​
Fin Pitch​
Fin Width​
Fin Height​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
TSMC
300mm
Value 20 nm Δ
48 nm N/A
 ? nm
 ? nm
90 nm 1.03x
64 nm 1.00x
0.07 µm2 0.55x

16 nm Microprocessors

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16 nm System on Chips

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16 nm Microarchitectures

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