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130 nm lithography process
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The 130 nanometer (130 nm) lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.

Industry[edit]

Fab
Process Name​
1st Production​
Type​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel TSMC Samsung Fujitsu IBM / Infineon / UMC Motorola AMD NEC NEC TI TI
P860 CS-91 CMOS 9S HiPerMOS 7
2001 2001 2001 2002 2001 2001 2002 2001 2001 2001
Bulk PDSOI Bulk
6 8 8 5 7 6 7
Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ Value 180 nm Δ
319 nm 0.66x 310 nm  ?x 350 nm  ?x  ? nm  ?x 350 nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x
345 nm 0.69x 340 nm  ?x 350 nm  ?x  ? nm  ?x 320 nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x
2.0 µm2 0.36x 2.14 µm2 0.46x  ? µm2  ?x 1.98 µm2 0.47x 1.8 µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x

Design Rules[edit]

130 nm Microprocessors[edit]

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130 nm programmable logic devices[edit]

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130 nm Microarchitectures[edit]

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