The 130 nm lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.

Industry

Intel

• 200mm (8-inch) wafers

	Measurement	Scaling from 180 nm
Contacted Gate Pitch	319 nm	0.66x
Interconnect Pitch (M1P)	345 nm	0.69x
SRAM bit cell	2.0 µm2	0.36x

Design Rules
Layer	Pitch	Thick	Aspect Ratio
Isolation	345 nm	450 nm	-
Polysilicon	319 nm	160 nm	-
Metal 1	293 nm	280 nm	1.7
Metal 2	425 nm	360 nm	1.7
Metal 3	425 nm	360 nm	1.7
Metal 4	718 nm	570 nm	1.6
Metal 5	1.064 µm	900 nm	1.7
Metal 6	1.143 µm	1.2 µm	2.1

130 nm Microprocessors

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130 nm System on Chips

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130 nm Microarchitectures

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