Semiconductor & Computer Engineering
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Difference between revisions of "130 nm lithography process"
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== Industry == | == Industry == | ||
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| − | + | |Type | |
| − | + | | | |
| − | { | + | |Contacted Gate Pitch |
| + | |Interconnect Pitch (M1P) | ||
| + | |SRAM bit cell | ||
| + | }} | ||
| + | {{scrolling table/mid}} | ||
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| − | | || | + | ! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[IBM]] |
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| − | | | + | | colspan="6" | Bulk || colspan="2" | PDSOI |
|- | |- | ||
| − | + | ! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ | |
|- | |- | ||
| − | | | + | | 319 nm || 0.66x || 310 nm || ?x || 350 nm || ?x || 350 nm || ?x |
| − | | | ||
| − | |||
| − | |||
|- | |- | ||
| − | ! colspan="4" | Design Rules | + | | 345 nm || 0.69x || 340 nm || ?x || 350 nm || ?x || ? nm || ?x |
| + | |- | ||
| + | | 2.0 µm<sup>2</sup> || 0.36x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || 1.8 µm<sup>2</sup> || ?x | ||
| + | {{scrolling table/end}} | ||
| + | === Design Rules === | ||
| + | {| class="wikitable collapsible collapsed" | ||
| + | |- | ||
| + | ! colspan="4" | Intel 130nm Design Rules | ||
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! Layer !! Pitch !! Thick !! Aspect Ratio | ! Layer !! Pitch !! Thick !! Aspect Ratio | ||
Revision as of 03:37, 24 April 2016
Semiconductor lithography processes technology
The 130 nm lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.
Contents
Industry
| Fab |
|---|
| Type |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel | TSMC | Samsung | IBM | ||||
|---|---|---|---|---|---|---|---|
| Bulk | PDSOI | ||||||
| Value | 180 nm Δ | Value | 180 nm Δ | Value | 180 nm Δ | Value | 180 nm Δ |
| 319 nm | 0.66x | 310 nm | ?x | 350 nm | ?x | 350 nm | ?x |
| 345 nm | 0.69x | 340 nm | ?x | 350 nm | ?x | ? nm | ?x |
| 2.0 µm2 | 0.36x | ? µm2 | ?x | ? µm2 | ?x | 1.8 µm2 | ?x |
Design Rules
| Intel 130nm Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 345 nm | 450 nm | - |
| Polysilicon | 319 nm | 160 nm | - |
| Metal 1 | 293 nm | 280 nm | 1.7 |
| Metal 2 | 425 nm | 360 nm | 1.7 |
| Metal 3 | 425 nm | 360 nm | 1.7 |
| Metal 4 | 718 nm | 570 nm | 1.6 |
| Metal 5 | 1.064 µm | 900 nm | 1.7 |
| Metal 6 | 1.143 µm | 1.2 µm | 2.1 |
130 nm Microprocessors
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130 nm System on Chips
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130 nm Microarchitectures
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