Semiconductor & Computer Engineering
From WikiChip
Difference between revisions of "130 nm lithography process"
(Created page with "{{lithography processes}} The '''130 nm lithography process''' is a full node semiconductor manufacturing process following the 150 nm lithography proces...") |
|||
| Line 1: | Line 1: | ||
{{lithography processes}} | {{lithography processes}} | ||
The '''130 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[150 nm lithography process|150 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 130 nm process began in 2001. This technology was replaced by with [[110 nm lithography process|110 nm process]] (HN) in 2003 and [[90 nm lithography process|90 nm process]] (FN) in 2004. | The '''130 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[150 nm lithography process|150 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 130 nm process began in 2001. This technology was replaced by with [[110 nm lithography process|110 nm process]] (HN) in 2003 and [[90 nm lithography process|90 nm process]] (FN) in 2004. | ||
| + | |||
| + | == Industry == | ||
| + | |||
| + | === Intel === | ||
| + | {| class="wikitable" | ||
| + | |- | ||
| + | | || Measurement || Scaling from [[180 nm]] | ||
| + | |- | ||
| + | | Contacted Gate Pitch || 319 nm || 0.66x | ||
| + | |- | ||
| + | | Interconnect Pitch (M1P) || 345 nm || 0.69x | ||
| + | |- | ||
| + | | [[SRAM]] bit cell || 2.0 µm<sup>2</sup> || 0.36x | ||
| + | |} | ||
| + | |||
| + | {| class="wikitable" | ||
| + | |- | ||
| + | ! colspan="4" | Design Rules | ||
| + | |- | ||
| + | ! Layer !! Pitch !! Thick !! Aspect Ratio | ||
| + | |- | ||
| + | | Isolation || 345 nm || 450 nm || - | ||
| + | |- | ||
| + | | Polysilicon || 319 nm || 160 nm || - | ||
| + | |- | ||
| + | | Metal 1 || 293 nm || 280 nm || 1.7 | ||
| + | |- | ||
| + | | Metal 2 || 425 nm || 360 nm || 1.7 | ||
| + | |- | ||
| + | | Metal 3 || 425 nm || 360 nm || 1.7 | ||
| + | |- | ||
| + | | Metal 4 || 718 nm || 570 nm || 1.6 | ||
| + | |- | ||
| + | | Metal 5 || 1.064 µm || 900 nm || 1.7 | ||
| + | |- | ||
| + | | Metal 6 || 1.143 µm || 1.2 µm || 2.1 | ||
| + | |} | ||
== 130 nm Microprocessors== | == 130 nm Microprocessors== | ||
Revision as of 20:44, 23 April 2016
Semiconductor lithography processes technology
The 130 nm lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.
Contents
Industry
Intel
| Measurement | Scaling from 180 nm | |
| Contacted Gate Pitch | 319 nm | 0.66x |
| Interconnect Pitch (M1P) | 345 nm | 0.69x |
| SRAM bit cell | 2.0 µm2 | 0.36x |
| Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 345 nm | 450 nm | - |
| Polysilicon | 319 nm | 160 nm | - |
| Metal 1 | 293 nm | 280 nm | 1.7 |
| Metal 2 | 425 nm | 360 nm | 1.7 |
| Metal 3 | 425 nm | 360 nm | 1.7 |
| Metal 4 | 718 nm | 570 nm | 1.6 |
| Metal 5 | 1.064 µm | 900 nm | 1.7 |
| Metal 6 | 1.143 µm | 1.2 µm | 2.1 |
130 nm Microprocessors
This list is incomplete; you can help by expanding it.
130 nm System on Chips
This list is incomplete; you can help by expanding it.
130 nm Microarchitectures
This list is incomplete; you can help by expanding it.
