Semiconductor & Computer Engineering
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Difference between revisions of "1.3 µm lithography process"
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| − | The '''1. | + | The '''1.3 µm lithography process''' was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out from the late 1980s to the early 1990s and replaced by [[1 µm]], [[800 nm]], and [[650 nm]] processes. |
== Industry == | == Industry == | ||
Revision as of 14:25, 10 January 2019
Semiconductor lithography processes technology
The 1.3 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out from the late 1980s to the early 1990s and replaced by 1 µm, 800 nm, and 650 nm processes.
Industry
| Fab |
|---|
| Process Name |
| 1st Production |
| Voltage |
| |
| Gate Length |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Motorola | Hitachi | Fujitsu | |
|---|---|---|---|
| Hi-CMOS III | |||
| 1987 | 1987 | ||
| 5 V | |||
| Value | Value | 2 µm Δ | Value |
| ? nm | 1.2 µm | 0.60x | ? nm |
| ? nm | 1.3 µm | 0.43x | nm |
| ? µm² | ? µm² | ? µm² | |
1.3 µm Microprocessors
This list is incomplete; you can help by expanding it.
References
- Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
