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Difference between revisions of "1.2 µm lithography process"

m (Reverted edits by Inject (talk) to last revision by David)
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  |Process Name
 
  |Process Name
 
  |1st Production
 
  |1st Production
|Voltage
 
 
  | 
 
  | 
  |Gate Length
+
  |Contacted Gate Pitch
 
  |Interconnect Pitch (M1P)
 
  |Interconnect Pitch (M1P)
 
  |SRAM bit cell
 
  |SRAM bit cell
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{{scrolling table/mid}}
 
{{scrolling table/mid}}
 
|-
 
|-
! [[Intel]] !! [[NEC]] !! [[Hitachi]]
+
! [[Intel]] !! [[NEC]]
 
|- style="text-align: center;"
 
|- style="text-align: center;"
|  ||   || Hi-CMOS III
+
|  ||  
 
|- style="text-align: center;"
 
|- style="text-align: center;"
| 1987 || 1988 ||
+
| 1987 || 1988
|- style="text-align: center;"
 
|  ||  || 5 V
 
 
|-
 
|-
! Value !! Value !! Value
+
! Value !! Value
 
|-
 
|-
| ? µm || ? µm || 1.2 µm
+
| ? nm || ? nm
 
|-
 
|-
| ? µm || ? µm || 1.3 µm
+
| ? nm || ? nm
 
|-
 
|-
| ? µm² ||  ? µm² ||  ? µm²
+
| ? µm<sup>2</sup> ||  ? µm<sup>2</sup>
 
{{scrolling table/end}}
 
{{scrolling table/end}}
  
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** {{qualcomm|MSM}} (prototype)
 
** {{qualcomm|MSM}} (prototype)
 
{{expand list}}
 
{{expand list}}
 
== References ==
 
* Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
 
  
 
[[Category:Lithography]]
 
[[Category:Lithography]]

Revision as of 08:34, 7 April 2017

The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry

Fab
Process Name​
1st Production​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel NEC
 
1987 1988
Value Value
 ? nm  ? nm
 ? nm  ? nm
 ? µm2  ? µm2

1.2 µm Microprocessors

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