Editing 65 nm lithography process

{{lithography processes}}
The '''65 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 65 nm process began in 2006. This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in 2007.

== Industry ==

=== Intel ===
{| class="wikitable"
|-
| || Measurement || Scaling from [[90 nm]]
|-
| Contacted Gate Pitch || 220 nm || 0.85x
|-
| Interconnect Pitch (M1P) || 210 nm || 0.95x
|-
| [[SRAM]] bit cell || 0.570 µm<sup>2</sup> || 0.57x
|}

{| class="wikitable"
|-
! colspan="4" | Design Rules
|-
! Layer !! Pitch !! Thick !! Aspect Ratio
|-
| Isolation || 220 nm || 320 nm || -
|-
| Polysilicon || 220 nm || 90 nm || -
|-
| Contacted Gate ||  220 nm ||  || -
|-
| Metal 1 || 210 nm || 170 nm || 1.6
|-
| Metal 2 || 210 nm || 190 nm || 1.8 
|-
| Metal 3 || 220 nm || 200 nm || 1.8 
|-
| Metal 4 || 280 nm || 250 nm || 1.8
|-
| Metal 5 || 330 nm || 300 nm || 1.8
|-
| Metal 6 || 480 nm || 430 nm || 1.8
|-
| Metal 7 || 720 nm || 650 nm || 1.8
|-
| Metal 8 || 1.80 µm || 975 nm || 1.8
|}

== 65 nm Microprocessors==
{{expand list}}

== 65 nm System on Chips==
{{expand list}}

== 65 nm Microarchitectures ==
* Intel
** {{intel|Core (arch)|Core}}
{{expand list}}
@@ Line 1: / Line 1: @@
 {{lithography processes}}
-The '''65 nanometer (65 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 65 nm process began in 2005. This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in 2007.
+The '''65 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 65 nm process began in 2006. This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in 2007.
 == Industry ==
-{{scrolling table/top|style=text-align: right; | first=Fab
- |Process Name
+=== Intel ===
- |1st Production
+{| class="wikitable"
- |Wafer
- |Metal Layers
- |&nbsp;
- |Contacted Gate Pitch
- |Interconnect Pitch (M1P)
- |SRAM bit cell (HD)
- |SRAM bit cell (LP)
- |DRAM bit cell
-}}
-{{scrolling table/mid}}
 |-
-! colspan="2" | [[Intel]] !! colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] !! colspan="2" | [[TI]] !! colspan="2" | [[IBM]] / [[Chartered]] / [[Infineon]] / [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]]
+| || Measurement || Scaling from [[90 nm]]
-|- style="text-align: center;"
-| colspan="2" | P1264 || colspan="2" |  || colspan="2" |  || colspan="2" |  || colspan="2" |  || colspan="2" | CS-200/CS-201/CS-250
-|- style="text-align: center;"
-| colspan="2" | 2005 || colspan="2" | 2005 || colspan="2" | 2007 || colspan="2" | 2005 || colspan="2" | 2005 || colspan="2" | 2006
-|- style="text-align: center;"
-| colspan="12" | 300mm
-|- style="text-align: center;"
-| colspan="2" | 8 || colspan="2" | 10 || colspan="2" | 11 || colspan="2" | 10 || colspan="2" | || colspan="2" | 11
 |-
-! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ
+| Contacted Gate Pitch || 220 nm || 0.85x
 |-
-| 220 nm || 0.85x || 250 nm || ?x || ? nm || ?x || 200 nm || 0.82x || 160 nm  || 0.67x || ? nm || ?x
+| Interconnect Pitch (M1P) || 210 nm || 0.95x
 |-
-| 210 nm || 0.95x || ? nm || ?x || ? nm || ?x || 180 nm  || 0.73 || 180 nm || 0.75x || ? nm || ?x
+| [[SRAM]] bit cell || 0.570 µm<sup>2</sup> || 0.57x
-|-
+|}
-| 0.570 µm² || 0.57x || 0.540 µm² ||  || 0.49 µm² || || 0.540 µm² || 0.55x || 0.499 µm² || 0.50x || ||
+{| class="wikitable"
 |-
-| 0.680 µm² || || 0.65 µm² || 0.65x || 0.49 µm² || || 0.676 µm² || 0.54x || 0.525 µm² || 0.53x || ? µm² || ?x
+! colspan="4" | Design Rules
-|-
-| || || 0.127 µm² || 0.67x || || || 0.189 µm² || 0.69x || || || ||
-{{scrolling table/end}}
-=== Design Rules ===
-{| class="wikitable collapsible collapsed"
-|-
-! colspan="4" | Intel 65nm Design Rules
 |-
 ! Layer !! Pitch !! Thick !! Aspect Ratio
@@ Line 70: / Line 46: @@
 == 65 nm Microprocessors==
-* AMD
+{{expand list}}
-** {{amd|Athlon 64 X2}}
-** {{amd|Athlon X2}}
+== 65 nm System on Chips==
-** {{amd|Opteron}}
-** {{amd|Phenom}}
-** {{amd|Turion 64 X2}}
-* Fujitsu
-** {{fujitsu|SPARC64 VII}}
-* IBM
-** {{ibm|Power6}}
-* Intel
-** {{intel|Celeron}}
-** {{intel|Core 2 Duo}}
-** {{intel|Core 2 Extreme}}
-** {{intel|Core 2 Quad}}
-** {{intel|Core 2 Quad Extreme}}
-** {{intel|Core Duo}}
-** {{intel|Pentium 4}}
-** {{intel|Pentium D}}
-** {{intel|Pentium Extreme Edition}}
-** {{intel|Pentium Dual-Core}}
-** {{intel|Xeon}}
-* Loongson
-** {{loongson|Godson 2}}
-* Qualcomm
-** {{qualcomm|MSM6xxx}}
-* Sun
-** {{sun|UltraSPARC T2}}
 {{expand list}}
 == 65 nm Microarchitectures ==
-* AMD
-** {{amd|K8|l=arch}}
-** {{amd|K10|l=arch}}
-* ARM
-** {{armh|ARM7|l=arch}}
-* IBM
-** {{ibm|z10|l=arch}}
 * Intel
-** {{intel|Core|l=arch}}
+** {{intel|Core (arch)|Core}}
-* Movidius
-** {{movidius|SHAVE v2.0|l=arch}}
-* VIA Technologies
-** {{via|Isaiah|l=arch}}
 {{expand list}}
-== Documents ==
-* [[:File:samsung foundry - 45, 65, 90 (August, 2007).pdf|Samsung foundry - 45 nm, 65 nm, 90 nm guide (August, 2007)]]
-[[category:lithography]]